In Situ Resistivity Curves Of The Al Cu 3 Ge Sio Download scientific diagram | in situ resistivity curves of the al cu 3 ge sio 2 si annealed in n 2 up to 500 °c at a ramping rate 5 °c min and b different ramping rates 2, 3, 5, 15, and 20 °c. After the fabrication of the al sio 2 p n si structure, al spiking was induced by annealing at 550 °c for 24 h in a vacuum chamber, followed by al etching. subsequently, 35% ni coverage was.
11 вђ Different Shapes Of Apparent Resistivity Curve Depending On The The prepared cu al–ni sio2 si and cu al–ni si samples were cut into small same sized pieces, which were then annealed in a high vacuum system with a base pressure of 5 10 5 pa at various temperatures (300, 400, 600, 750, 800 oc) for 1 min. the phase and crystallinity of the samples were characterized by the x ray diffraction (xrd) technique. In the first experiment, we studied the influence of plasma treatments on the surface passivation quality for single and triple al 2 o 3 sio 2 multilayers, i.e., c si (al 2 o 3 sio 2) n with n = 1 and n = 3, which were deposited with plasma assisted ald (pa ald). for the activation mainly of the chemical interface passivation, a post. The sheet resistance r co of co was extracted from the total sheet resistance assuming that the co and sio 2 si are two parallel resistors. the value of r co gradually levels off to 31.5 (Ω ) which corresponds to resistivity of 10.5 μΩ cm at ∼ 19 ml. the thickness dependent resistivity was fitted by models including surface, interface. The cu 2p 3 2 peak of the nio cu x o n si samples after air exposure can be deconvolved into two peaks centered at ~932.4 and ~934.6 ev, which corresponds to cu 2 o and cuo species, respectively.
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